Primarily used to form a phosphorus-doped layer on silicon wafers to create a PN junction.
1.Phosphorus atom diffusion doping: Through high-temperature thermal decomposition and chemical reaction, the phosphorus source gas is decomposed, allowing phosphorus atoms to diffuse into the silicon wafer surface, forming a Phosphosilicate Glass (PSG) layer and a phosphorus-doped layer. This enables the transition from P-type to N-type silicon, thereby forming a PN junction.
2.Ensuring diffusion uniformity: The equipment utilizes a vacuum pump system to evacuate the reaction chamber to a preset negative pressure state, typically 100–150 mBarr. This reduces the gas molecular density within the chamber and increases the mean free path of gas molecules, resulting in a more uniform distribution of phosphorus atoms. This ensures uniformity of silicon wafer diffusion and effectively enhances solar cell conversion efficiency.
3.Compatibility with multiple processes and wafer sizes: The equipment features multi-process compatibility. In addition to phosphorus diffusion, it can support boron diffusion, oxidation, and annealing. It is compatible with mainstream wafer sizes ranging from 18X to 230 mm.
4.High throughput: Designed for high capacity, with a single tube wafer capacity of 2400–3120 pcs/tube, meeting the demands of mass production.
5.Low consumption and cost: It can save a significant amount of phosphorus source gas (e.g., up to 50% savings on POCl3). The equipment’s compact footprint and low load reduce overall operational costs.
6.Automated and intelligent control: Equipped with a fully automated intelligent control system featuring a one-click temperature self-tuning function, which reduces commissioning time. It is easily integrated into MES or production control systems and compatible with all conventional automation solutions, enabling automated monitoring and management of the production process.