The core function is to deposit ultra-thin, uniform, and dense atomic-level thin films on the substrate surface through self-limiting chemical adsorption and reaction, achieved by alternately pulsing gaseous precursors into the reaction chamber.
1.Self-limiting atomic-level deposition: Two or more precursors are alternately introduced without direct contact, with each pulse forming only a single atomic layer or sub-atomic layer thin film, enabling precisely controllable thickness.
2.Exceptional uniformity and conformality: Film thickness uniformity achieves atomic-level precision, and the film can perfectly cover the internal and external surfaces of substrates with complex morphologies (such as deep holes and micro-nano structures).
3.Precise process control: Accurately controls precursor pulse time, purge time, reaction temperature, and chamber pressure, enabling precise customization of film composition, structure, and thickness.
