Laser Edge Passivation

Laser Edge Passivation

Laser Edge Passivation

Description

1. Non-Destructive Laser Ablation of P-N Junctions: Precisely treats the P-N junction in the scribed area of the cell to suppress edge recombination and reduce cutting loss. This results in a module-side power gain of ≥3W.
2. Flexible Offline Layout: Compatible with existing TOPCon production lines. It adapts to various cell formats from half-cut to 1/4-cut. It balances low cost with high-volume production, providing an economical and optimized solution.

Parameter
  • Product DimensionsL5800 mm × W2800 mm × H2500 mm
  • Throughput≥ 9600 pcs/h
  • Uptime≥ 98%
  • Breakage ≤ 0.02%
  • Laser Wavelength 532nm
  • Loader Vision Inspection Edge-grasping positioning
  • Wafer Size 18X – 230mm
  • Power Stability ≤ 2% rms
  • Laser Lifespan 20000h
  • Patterning Accuracy ± 15 µm
  • Repeatability ± 10 µm
  • Max Galvo Scan Speed 80m/s
  • Laser Processing Method Galvo Scanning