The core function of the low pressure boron diffusion equipment is to precisely dope boron atoms into the surface and interior of silicon wafers under low-pressure, high-temperature conditions, thereby forming a doped layer of a specific conductivity type.
1.Boron doping: Through thermal decomposition or reaction of gaseous boron sources (such as BCl₃), boron atoms diffuse into the silicon wafer lattice to achieve doping.
2.Precise process control: Accurately regulates reaction pressure, temperature, doping duration, and boron source flow to ensure doping uniformity and consistency.
3.Doping layer parameter adjustment: Allows adjustment of doping depth (junction depth) and concentration profile as required, meeting the electrical performance needs of various semiconductor devices.
