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Low Pressure POCL Diffusion

Low Pressure POCL Diffusion

Low Pressure POCL Diffusion

Datasheet
Description

Deposition of PSG and diffusion of phosphorus dopant via temperature and chemical reactions. Applicable for oxidation, POCL diffusion in wafer or in polysilicon layer.

Parameter
  • Uptime98%
  • Tube I.D430-480mm
  • Capacity2400～2880 pcs/tube
  • Wafer Size Compatible with 182-230 wafer sizes
  • Sheet Resistance non-uniformity within-wafer & wafer-to-wafer ≤5%；run-to-run ≤4%
  • Temperature400-950℃
Highlights
  • High capacity with double loading
  • Innovative 4 segment heater + ATS system for better temperature control
  • Door flange with purge-ring design for longer maintenance cycle
  • New type of flange design for better sealing
  • New water-cooled furnace door system
  • New cooling purification area
  • One-click temperature auto tuning function
  • Fully automatic intelligent control system

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