Description

Key equipment used for etching and opening the passivation layer during the XBC cell manufacturing process.

1.High-precision patterned etching: Utilizes ultra-fast laser with specialized optical path design and beam shaping to achieve high-speed, precise etching on various passivation layers.
2.Minimal substrate damage: Leverages the characteristics of ultra-fast lasers to ensure minimal damage to the substrate during etching, effectively preserving silicon wafer performance and ensuring cell quality and yield.
3.Compatibility with various silicon substrates: Meets the production requirements of different types of silicon wafers, offering strong versatility.
4.Enhanced cell electrical performance: Ensures consistency in the Gap zone through precise P/N zone patterning, achieving excellent electrical isolation and carrier collection efficiency.
5.High throughput: The equipment delivers high throughput to meet mass production demands.
6.Low breakage rate: The equipment operates stably and reliably with a low breakage rate.

Parameter

• Product DimensionsL6900 mm × W3900 mm × H2500 mm (half-cut) L6060 mm × W3400 mm × H2500 mm (full)
• Throughput≥ 4000 pcs/h @ 18X (relevant to pattern)
• Uptime≥98%
• Breakage ≤ 0.02% @ 18X, ≤ 0.03% @ 210
• Loader Vision InspectionEdge chipping, missing corners, Mark point positioning @ 20M pixel industrial camera
• Unloader Vision Inspection Mark spacing, PT accuracy @ 20M pixel industrial camera
• Pattern CompatibilityCompatible with plt; dxf; dwg formats
• Wafer Size Compatibility18X – 210 mm
• Spot Size180 – 300 µm (optional)
• Laser Power≥100W@532nm ≥60W@355nm
• Power Stability ≤2%
• Pattern Precision±10µm
• Repeatability Precision ±10μm
• Galvanometer Scanning Speed ≥70m/s
• Laser Processing Method Galvanometer scanning
• Upstream Integration Offline / Inline (Based on customer needs)