Characterization & Analysis
Hidden Crack Detector
Description: Mainly detect hidden cracks, edge collapse, fragments, and stacking defects of batteries.
Parameter:CT: ≥5000psc/hour (adapt to automated production capacity); False judgment rate: ≤0.2%, yield 98% (calculation method: total number of false judgments/total number of tests*100%); Misdetection rate: ≤0.2%, yield 98% (calculation method: total number of false judgments/total number of tests*100%)
Basket Fragment Detector
Description: Mainly used for basket detection in the process sections of velveting, alkali polishing and diffusion to detect fragments with liquid, connected sheets, missing sheets, wrong teeth, uneven insertion, etc.
Parameter:CT≤5s/psc; Minimum size of fracture detection: ≤10x10mm; Minimum size of fragment detection: ≤5x5mm; Misdetection rate: ≤1%; Misjudgment rate: “≤0.1%
Quartz Boat Fragment Detector
Description: Inline real-time detection of the top teeth of the quartz boat during movement, and detection of warped, dropped, boat surface fragments, and empty wafers carried by the quartz boat.
Parameter:Adapted to the automation capacity, not less than the automation capacity; Misdetection rate: ≤2%; Misjudgment rate: “≤0.2%
Graphite Boat Fragment Detector
Description: Inline real-time detection of graphite boat top teeth during movement, and detection of warped, dropped, boat surface fragments, and empty wafers carried by the graphite boat.
Parameter:Adapted to automation capacity, not less than automation capacity; Misdetection rate: ≤2%; Misjudgment rate: ”≤0.2%
Sheet Resistance Detector
Description: Use contact & non-contact measurement methods to detect sheet resistance of silicon wafers inline. It is a non-contact sheet resistance tester used to monitor the diffusion process and supports multi-point test or line scan mode.
Parameter:CT≤contact ≤5s/psc/non-contact ≤1s/pcs; Static repeatability: ≤1.5%; Dynamic repeatability ≤1.5%; Test accuracy: ≤1.5%
Reflectivity Detector
Film Thickness Detector
Description:The sample spectral information is collected in a non-contact manner and converted into electrical signals, and a unique algorithm is used to analyze and calculate the film thickness and refractive index and other film optical constants. It can test PolySi, SiO2, BC patterned PolySi film layer, SiNx, ITO, ZnO, TiO2, SnO2 and other films
Parameter:CT: ≤0.5s/psc (adapted to automated production capacity); Film thickness test range: 40nm-2000nm; Measurement accuracy of film thickness static repeatability: standard deviation ≤0.5nm; Poly film thickness test accuracy: ±3nm
Optical Inspection
Description: For PECVD process, color and defect sorting for postdeposition wafers at automation station.
Parameter:≥ throughput larger than automation
Missed-detection ≤0.1%
False-detection ≤0.3%
PL Detector
Description: The main detection types include and are not limited to: hidden cracks, scratches, suction cup marks, black spots, concentric circles, graphite boat marks, finger marks.
Parameter:CT: ≥5000psc/hour (adapt to automation capacity); False judgment rate: ≤0.2%, yield rate 98% (calculation method: total number of false judgments/total number of inspections*100%); Misdetection rate: ≤0.2%, yield rate 98% (calculation method: total number of false judgments /total number of inspections*100%); Repeatability: NG sheet repeatability 98%
Ellipsometry film thickness detector
In-line Thickness Detector
Description: Detect the original silicon wafer thickness through a micron-level laser scanner.
Parameter:CT≤0.6s/psc; Scanner accuracy: ±2μm; Static repeatability: ±3μm; Silicon wafer Z-axis fluctuation requirement: ≤0.5mm
AOI Detector
Description: Screen: Mainly detects defects such as broken grid, printing deviation, thick line, back electrode, and slurry leakage after the printing process of battery cells.Positive and negative film: Detects defects such as broken grid, printing deviation, thick line, back electrode, slurry leakage, thick grid, edge collapse, white spot, screen abnormality, and color difference within the chip of finished battery cells.
Parameter:CT: Screen ≤0.6s/psc/positive and negative film ≤0.7s/psc; False judgment rate: ≤5%, yield 98% (calculation method: total number of re-judgment A-level/total number of NG *100%); Misdetection rate: ≤0.1%, yield 98% (calculation method: total number of missed judgments/total number of tests*100%)
EPL Detector
Description: Adopt non-contact structure to measure EL image and PL image. Compared with conventional EL, it does not cause contact damage to the battery and improves the on-site yield.
Parameter:Parameter performance: CT≥5000s/psc (adapt to automated production capacity); False judgment rate: ≤0.2%, yield 98% (calculation method: total number of false judgments /total number of tests*100%); Misdetection rate: ≤0.2%, yield 98% (calculation method: total number of false judgments /total number of tests*100%); Repeatability: NG sheet repeatability 98%
IV&EL Detector
Description: EL: A system that detects defects in solar cells in real time through machine vision, classifies cells into grades, and statistically analyzes the detection data. Defect control is performed based on various attributes such as defect area and defect quantity. The main detection types include but are not limited to: hidden cracks, scratches, suction cup marks, black spots, concentric circles, graphite boat marks, fingerprints, etc.IV: Supports four-quadrant measurement, step light intensity, reverse current test, multiple test methods, and accurate measurement of Rs and Rsh.
Parameter:CT: ≥5000s/pcs (adapt to automated production capacity); False judgment rate: ≤0.2%, yield rate 98% (calculation method: total number of false judgments/total number of tests*100%); Misjudgment rate: ≤0.2%, yield rate 98% (calculation method: total number of false judgments /total number of tests*100%); Repeatability: NG sheet repeatability 98%
Laser Spot Detector
Description: Professional instrument for measuring the spot size, shape and energy distribution formed by the laser beam on the cell.
Parameter:CT≤0.7s/pcs; Pixel accuracy: 1μm/Pixel; Static stability: ±1μm