Precisely treats the P-N junction in the scribed area of the cell to suppress edge recombination and reduce cutting loss. This results in a module-side power gain of ≥3W.Read more
The film is formed by thermal decomposition in a low-pressure atmosphere. It can prepare silicon oxide and various crystalline silicon films, meeting the requirements of special processes such as tunneling oxidation passivation, and can be used for high-efficiency N-type TOPCon and BC cells.Read more
The core function of the low pressure boron diffusion equipment is to precisely dope boron atoms into the surface and interior of silicon wafers under low-pressure, high-temperature conditions, thereby forming a doped layer of a specific conductivity type.Read more
The core function is to deposit ultra-thin, uniform, and dense atomic-level thin films on the substrate surface through self-limiting chemical adsorption and reaction, achieved by alternately pulsing gaseous precursors into the reaction chamber.Read more
Primarily used in solar cell manufacturing, its core function is to deposit a passivation layer on the edge of solar cells to enhance their performance and stability.Read more
Product material: Silicon carbide; Product structure: integrated sintering molding; Product use: automatic loading and unloading automation such as online diffusion/annealing/LPCVD, and transportation carriers for silicon wafer cassetteRead more
Utilizes plasma to activate gaseous reactants to deposit uniform, dense and functional thin films on substrate surfaces in a low-temperature environment.Read more
Use coarse FeCrAl heating wire as the heating element, which has excellent temperature uniformity, product consistency and long service life; suitable for diffusion, oxidation, LPCVD, PECVD and other models.Read more
